r07ds1014ej0100 rev.1.00 page 1 of 6 feb 21, 2013 preliminary data sheet np60n04vdk 40 v ? 60 a ? n-channel power mos fet application: automotive description the np60n04vdk is n-channel mos field effect transistors designed for high current switching applications. features ? super low on-state resistance r ds(on) = 3.85 m ? max. (v gs = 10 v, i d = 30 a) ? low c iss : c iss = 2450 pf typ. (v ds = 25 v) ? logic level drive type ? designed for automotive application and aec-q101 qualified ordering information part no. lead plating packing package np60n04vdk-e1-ay * 1 taping (e1 type) np60n04vdk-e2-ay * 1 pure sn (tin) tape 2500 p/reel taping (e2 type) to-252 (mp-3zp) note: * 1 pb-free (this product does not contain pb in the external electrode) absolute maximum ratings (t a = 25c) item symbol ratings unit drain to source voltage (v gs = 0 v) v dss 40 v gate to source voltage (v ds = 0 v) v gss ? 20 v drain current (dc) (t c = 25c) i d(dc) ? 60 a drain current (pulse) * 1 i d(pulse) ? 240 a total power dissipation (t c = 25c) p t1 105 w total power dissipation (t a = 25c) p t2 1.2 w channel temperature t ch 175 c storage temperature t stg ?55 to +175 c repetitive avalanche current * 2 i ar 28 a repetitive avalanche energy * 2 e ar 78 mj notes: *1 t c = 25c, p w ? 10 ? s, duty cycle ? 1% *2 r g = 25 ? , v gs = 20 v ? 0 v thermal resistance channel to case thermal resistance r th(ch-c) 1.43 c/w channel to ambient thermal resistance r th(ch-a) 125 c/w r07ds1014ej0100 rev.1.00 feb 21, 2013
np60n04vdk preliminary r07ds1014ej0100 rev.1.00 page 2 of 6 feb 21, 2013 electrical characteristics (t a = 25c) item symbol min. typ. max. unit test conditions zero gate voltage drain current i dss ? ? 1 ? a v ds = 40 v, v gs = 0 v gate leakage current i gss ? ? ? 100 na v gs = ? 20 v, v ds = 0 v gate to source threshold voltage v gs(th) 1.5 1.8 2.5 v v ds = v gs , i d = 250 ? a forward transfer admittance * 1 | y fs | 33 66 ? s v ds = 5 v, i d = 30 a r ds(on)1 ? 3.20 3.85 m ? v gs = 10 v, i d = 30 a drain to source on-state resistance * 1 r ds(on)2 ? 4.30 8.60 m ? v gs = 4.5 v, i d = 15 a input capacitance c iss ? 2450 3680 pf output capacitance c oss ? 340 510 pf reverse transfer capacitance c rss ? 140 260 pf v ds = 25 v v gs = 0 v f = 1 mhz turn-on delay time t d(on) ? 14 31 ns rise time t r ? 6 15 ns turn-off delay time t d(off) ? 49 98 ns fall time t f ? 6 15 ns v dd = 20 v, i d = 30 a v gs = 10 v r g = 0 ? total gate charge q g ? 42 63 nc gate to source charge q gs ? 11 ? nc gate to drain charge q gd ? 6 ? nc v dd = 32 v v gs = 10 v i d = 60 a body diode forward voltage * 1 v f(s-d) ? 0.9 1.5 v i f = 60 a, v gs = 0 v reverse recovery time t rr ? 36 ? ns reverse recovery charge q rr ? 44 ? nc i f = 60 a, v gs = 0 v di/dt = 100 a/ ? s note: * 1 pulsed test test circuit 3 gate charge v gs = 20 0 v pg. r g = 25 50 d.u.t. l v dd test circuit 1 avalanche capability pg. d.u.t. r l v dd test circuit 2 switching time r g pg. i g = 2 ma 50 d.u.t. r l v dd i d v dd i as v ds bv dss starting t ch v gs 0 duty cycle 1% = 1 s v gs wave form v ds wave form v gs v ds 10% 0 0 90% 90% 90% v gs v ds t on t off t d(on) t r t d(off) t f 10% 10%
np60n04vdk preliminary r07ds1014ej0100 rev.1.00 page 3 of 6 feb 21, 2013 typical characteristics (t a = 25c) derating factor of forward bias safe operating area 0 20 40 60 80 100 120 20 40 60 80 100 120 0 dt - percentage of rated power - % 0 25 50 75 100 125 150 175 t c - case temperature - c total power dissipation vs. case temperature 0 25 50 75 100 125 150 175 t c - case temperature - c p t - total power disslpation - w forward bias safe operating area 0.1 1 10 100 v ds - drain to source voltage - v i d - drain current - a 0.1 1 10 100 1000 100 1 m 10 m 100 m 1 10 100 1000 pw - pulse width - s transient thermal resistance vs. pulse width 0.01 0.1 1 10 100 1000 r th(t) - transient thermal resistance - c/w r th(ch-c) = 1.43c/w r th(ch-a) = 125c/w power dissipation limited secondary breakdown limited t c = 25c single pulse single pulse i d(dc) = 60 a i d(pulse) = 240 a r ds(on) limited (v gs =10 v) dc pw = 10 ms pw = 1 ms pw = 100 s
np60n04vdk preliminary r07ds1014ej0100 rev.1.00 page 4 of 6 feb 21, 2013 forward transfer characteristics 0.001 0.01 0.1 1 10 100 01234 v gs - gate to source voltage - v i d - drain curent - a gate to source threshold voltage vs. channel temperature 0 1 2 3 ?100 ?50 0 50 100 150 200 t ch - channel temperature - c v gs(th) - gate to source threshold voltage - v forward transfer admittance vs. drain current 1 10 100 0.1 1 10 100 i d - drain current - a |y fs | - forward transfer admittance - s drain to source on-state resistance vs. drain current 0 2 8 9 6 7 5 4 1 3 2 8 9 6 7 5 4 1 3 0 0.1 1 10 100 1000 i d - drain current - a r ds(on) - drain to source on-state resistance - m drain to source on-state resistance vs. gate to source voltage 0 5 10 15 20 v gs - gate to source voltage - v drain current vs. drain to source voltage 0 50 150 250 100 200 02.0 0.5 1.5 1.0 v ds - drain to source voltage - v i d - drain current - a r ds(on) - drain to source on-state resistance - m v ds = v gs i d = 250 a i d = 30 a pulsed pulsed pulsed v gs = 10 v v gs = 4.5 v v gs = 10 v v gs = 4.5 v v ds = 10 v pulsed v ds = 5 v pulsed t a = ?55c 25c 75c 150c 175c t a = ?55c 25c 75c 150c 175c
np60n04vdk preliminary r07ds1014ej0100 rev.1.00 page 5 of 6 feb 21, 2013 capacitance vs. drain to source voltage 100 1000 10000 0.1 1 10 100 v ds - drain to source voltage - v c iss , c oss , c rss - capacitance -pf reverse recovery time vs. drain current 1 10 100 0.1 1 10 100 i f - drain current - a t rr - reverse recovery time - ns switching characteristics 1 10 100 1000 0.1 1 10 100 i d - drain current - a t d(on) , t r , t d(off) , t f - switching time - ns dynamic input/output characteristics 0 20 35 10 30 15 5 25 4 2 6 8 14 12 10 q g - gate charge - nc v ds - drain to source voltage - v 0 v gs - gate to source voltage - v source to drain diode forward voltage 0.1 1 10 100 1000 0 0.2 0.4 0.6 0.8 1.0 1.2 v f(s-d) - source to drain voltage - v i f - diode forward current - a drain to source on-state resistance vs. channel temperature ?100 ?50 0 50 100 150 200 t ch - channel temperature - c r ds(on) - drain to source on-state resistance - m 03 0 20 10 50 40 v dd = 20 v v gs = 10 v r g = 0 v gs = 10 v i d = 30 a v gs = 4.5 v i d = 15 a pulsed di/dt = 100 a/s v gs = 0 v v gs = 0 v f = 1 mhz c iss c rss c oss v gs v ds i d = 60 a pulsed 2 8 9 6 7 5 4 1 3 0 t d(off) t d(on) t r t f v gs = 0 v v gs = 4.5 v v gs = 10 v v dd = 32 v 20 v 8 v
np60n04vdk preliminary r07ds1014ej0100 rev.1.00 page 6 of 6 feb 21, 2013 package drawing (unit: mm) to-252 (mp-3zp) (mass: 0.3g typ.) 6.5 0.2 2.3 0.1 0.50.1 0.76 0.12 0 to 0.25 0.50.1 1.0 no plating no plating 5.1 typ. 1.0 typ. 6.10.2 0.51 min. 4.0 min. 0.8 10.4 max. (9.8 typ.) 4.3 min. 1 4 23 1.14 max. 2.3 2.3 1. gate 2. drain 3. source 4. fin (drain) 1.13 equivalent circuit source body diode gate drain remark: strong electric field, when exposed to this device, can cause destructi on of the gate oxide and ultimately degrade the device operation. steps must be taken to stop generation of static electricity as much as possible, and quickly diss ipate it once, when it has occurred.
all trademarks and registered trademarks are t he property of their respective owners. c - 1 revision history np60n04vdk data sheet description rev. date page summary 1.00 feb 21, 2013 ? first edition issued
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